Investigating Magnetic Tunnel Junctions
Major
Physics
Submission Type
Poster
Area of Study or Work
Physics
Faculty Advisor
Abdel Isakovic
Location
CNS Atrium
Start Date
4-12-2025 8:30 AM
End Date
4-12-2025 9:30 AM
Abstract
Spintronics is a cutting-edge field that leverages the intrinsic spin of electrons, in addition to their charge, to develop novel electronic devices with enhanced functionalities. One of the critical challenges in spintronics is minimizing the area under the hysteresis curve, which is essential for improving the efficiency and performance of magnetic materials used in these devices. This project aims to investigate methods for reducing the energy losses and increasing the stability of spintronic systems by addressing the hysteresis behavior in ferromagnetic materials. Reducing the hysteresis area is crucial for applications in memory storage, sensors, and other spintronic devices where low power consumption and high switching speeds are paramount. The significance of this research lies in its potential to optimize the performance of magnetic storage devices such as MRAM (Magnetoresistive Random-Access Memory), which could revolutionize data storage technologies. By understanding the mechanisms behind hysteresis, we can develop materials and devices that exhibit faster switching times and lower energy consumption. The methodology includes both experimental and computational approaches. The experimental work involves fabricating thin film ferromagnetic materials and characterizing their magnetic properties under varying conditions such as shape. Background research indicates that the hysteresis loop is influenced by material composition, grain structure, and external factors like temperature and field strength. The open research questions focus on identifying the optimal material properties that minimize the area under the hysteresis curve and enhance the overall performance of spintronic devices. Future work will focus on exploring new material systems and refining computational models for more accurate predictions of hysteresis behavior.
Investigating Magnetic Tunnel Junctions
CNS Atrium
Spintronics is a cutting-edge field that leverages the intrinsic spin of electrons, in addition to their charge, to develop novel electronic devices with enhanced functionalities. One of the critical challenges in spintronics is minimizing the area under the hysteresis curve, which is essential for improving the efficiency and performance of magnetic materials used in these devices. This project aims to investigate methods for reducing the energy losses and increasing the stability of spintronic systems by addressing the hysteresis behavior in ferromagnetic materials. Reducing the hysteresis area is crucial for applications in memory storage, sensors, and other spintronic devices where low power consumption and high switching speeds are paramount. The significance of this research lies in its potential to optimize the performance of magnetic storage devices such as MRAM (Magnetoresistive Random-Access Memory), which could revolutionize data storage technologies. By understanding the mechanisms behind hysteresis, we can develop materials and devices that exhibit faster switching times and lower energy consumption. The methodology includes both experimental and computational approaches. The experimental work involves fabricating thin film ferromagnetic materials and characterizing their magnetic properties under varying conditions such as shape. Background research indicates that the hysteresis loop is influenced by material composition, grain structure, and external factors like temperature and field strength. The open research questions focus on identifying the optimal material properties that minimize the area under the hysteresis curve and enhance the overall performance of spintronic devices. Future work will focus on exploring new material systems and refining computational models for more accurate predictions of hysteresis behavior.