Characterization of Phase Transition Behavior in VO2 Thin Films
Abstract
Our goal is to characterize the phase transition behavior of vanadium dioxide (VO2) thin films, specifically focusing on the metal-insulator transition, through electrical resistance measurements. We will synthesize high-quality VO2 thin films using a sol-gel process to prepare precursor solutions, spin coating for uniform thin film deposition, and controlled annealing to tune the properties and phase transition behavior of VO2. The resistivity of the thin films will be measured using a four-point-probe technique, specifically the Van der Pauw method. This project aims to provide insights into the fundamental properties of VO2 thin films and contribute to the development of novel electronic and photonic devices based on VO2's unique phase transition characteristics.
Characterization of Phase Transition Behavior in VO2 Thin Films
CNS Atrium
Our goal is to characterize the phase transition behavior of vanadium dioxide (VO2) thin films, specifically focusing on the metal-insulator transition, through electrical resistance measurements. We will synthesize high-quality VO2 thin films using a sol-gel process to prepare precursor solutions, spin coating for uniform thin film deposition, and controlled annealing to tune the properties and phase transition behavior of VO2. The resistivity of the thin films will be measured using a four-point-probe technique, specifically the Van der Pauw method. This project aims to provide insights into the fundamental properties of VO2 thin films and contribute to the development of novel electronic and photonic devices based on VO2's unique phase transition characteristics.